www.irf.com 1 IRF7901D1 01/19/00 parameter symbol q1 - control fet q2 - synch fet units & schottky drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous output t l = 100c i d 6.2 a current (v gs 3 4.5v) n pulsed drain current ? i dm 48 power dissipation t l = 100c p d 2.0 w junction & storage temperature range t j , t stg C55 to 150 c schottky & body diode i f (av) tbd tbd a average forward current m pulsed source current i sm tbd tbd provisional datasheet ? co-packaged dual n-channel hexfet ? power mosfet and schottky diode ? ideal for synchronous buck dc-dc converters up to 5a peak output ? low conduction losses ? low switching losses ? low v f schottky rectifier dual fetky tm co-packaged dual mosfet plus schottky diode absolute maximum ratings parameter symbol max. units maximum junction-to-ambient ? r q ja 62.5 c/w maximum junction-to-lead o r q jl 25.0 thermal resistance synchronous buck dc-dc topology pwr vin pwr vin pwr vout pwr vout q1 gate pgnd q2 gate q1 source top view 8 1 2 3 4 5 6 7 description the fetky tm family of co-packaged mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. advanced hexfet ? power mosfets combined with low forward drop schottkys result in extremely efficient devices suitable for a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. internal connections enable easier board layout design with reduced stray inductance. pin 7&8 pwr vin pin 3 pgnd pin 2 q1 ga te pin 4 q2 ga te pin 5&6 pwr vout pin 1 q1 source schottky q1 q2 vin vout shaded area = dual fetky so-8 pd - 93844
www.irf.com 2 IRF7901D1 01/19/00 parameter min typ max min typ max units conditions drain-to-source bv dss 30 C C 30 C C v v gs = 0v, i d = 250a breakdown voltage* static drain-source r ds (on) 28.5 33 22 28 m w v gs = 4.5v, i d = 5a ? on resistance* gate threshold voltage* v gs (th) 1.0 1.0 v v ds = v gs ,i d = 250a drain-source leakage i dss 30 30 a v ds = 24v, v gs = 0 0.15 4.3 ma v ds = 24v, v gs = 0, t j = 125c gate-source leakage i gss 100 100 na v gs = 20v current* total gate charge* q g cont 7.6 9.9 15.9 20.7 v gs = 5v, v ds = 16v, i d = 5a q g synch 6.6 8.6 13.6 17.7 v gs = 5v, v ds =100mv, i d =5a pre-vth q gs1 2.0 5.5 v ds = 16v, i d = 5a gate-source charge post-vth q gs2 0.5 0.9 nc gate-source charge gate to drain charge q gd 1.8 4.8 switch charge* q sw 2.4 3.1 5.7 7.4 (q gs2 + q gd ) output charge* q oss 13.3 17.3 9.1 12.0 v ds = 16v, v gs = 0 gate resistance r g 3.4 4.3 w electrical characteristics body diode & schottky diode ratings and characteristics q1 - control fet q2 - synch fet & schottky current* parameter min typ max min typ max units conditions diode forward v sd - - - 0.48 0.52 v i s = 1a ? , v gs = 0v voltage* reverse recovery time trr - - - tbd ns t j = 25c, i s = 5.0a, v ds = 16v reverse recovery charge qrr - - - tbd nc forward turn-on time t on n/a intrinsic turn-on time is negligible (turn-on is dominated by l s + l d ) ? repetitive rating; pulse width limited by max. junction temperature. ? pulse width 300 s; duty cycle 2%. ? when mounted on 1 inch square copper board, t < 10 sec. m 50% duty cycle, rectangular. n combined q1, q2 i rms @ pwr v out pins. switching or other losses will decrease rms current capability o when mounted on irnbps2 design kit. measured as device t j to pwr leads (v in & v out ) * devices are 100% tested to these parameters.
www.irf.com 3 IRF7901D1 01/19/00 typical application the performance of the new dual fetky tm has been tested in-circuit using irs new irnbps2 dual output synchronous buck design kit. the dual fetky is suitable for synchronous buck dc-dc converters operating up to 21v in and 5a peak output current. typical output voltages include 1.8v out , 2.5v out , 3.3v out & 5.0v out . the dual fetky integrates all the power semiconductor devices for dc-dc conversion within one so-8 package, see figure 1. the high side control mosfet (q1) is optimized for low combined q sw and r ds (on). the low side synchronous mosfet (q2) is optimized for low r ds (on) and high cdv/dt immunity. the ultra-low v f schottky diode is internally connected in parallel with the synchronous mosfet, for improved deadtime efficiency. for ease of circuit board layout, the dual fetky has been internally configured such that it represents a functional block for the power device portion of the synchronous buck dc-dc converter. this helps to minimize the external pcb traces compared to a discrete solution. pin 7 &8 pwr vin pin 3 pgnd pin 2 q1 ga te pin 4 q2 ga te pin 5 &6 pwr vo ut pin 1 q1 source scho ttky q1 q2 vin vout sha ded area = dual fetky figure 1. synchronous buck dc-dc converter using irs new IRF7901D1 dual fetky tm . IRF7901D1 dual fetky tm performa nce in synchronous buck dc- dc for 3.3v out, using irnbp s2 design kit. 89% 90% 91% 92% 93% 94% 95% 11.522.533.544.55 output current (a) efficiency (%) IRF7901D1, v in = 10.8v, freq = 300khz IRF7901D1, v in = 14v, freq = 300khz IRF7901D1, v in = 21v, freq = 300khz figure 2. IRF7901D1 dual fetky tm electrical efficiency at 3.3vout. figure 3. IRF7901D1 dual fetky tm electrical efficiency at 5.0vout. in-circuit efficiency the in-circuit efficiency curves for the dual fetky are shown in figure 2 & 3. the dual fetky can achieve up to 96.6% and 94.6% peak efficiency for the 5.0v and 3.3v applications respectively, with excellent maximum load efficiency. IRF7901D1 dual fetky tm performa nce in synchronous buck dc- dc for 5.0v out, using irnbp s2 design kit 93% 94% 95% 96% 97% 1 1.5 2 2.5 3 3.5 4 4.5 5 output current (a) efficiency (%) IRF7901D1, v in = 10.8v, freq = 300khz IRF7901D1, v in = 14v, freq = 300khz IRF7901D1, v in = 21v, freq = 300khz
www.irf.com 4 IRF7901D1 01/19/00 so-8 package outline part marking information
www.irf.com 5 IRF7901D1 01/19/00 so-8 tape & reel information dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t 3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 3-30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171-0021 japan tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade,great world city west tower, 13-11,singapore 237994 tel:65 838 4630 ir taiwan : 16f, suite b, 319, sec.2, tun hwa south road, taipei 10673, taiwan, r.o.c. tel : 886-2-2739-4230 http://www.irf.com/ data and specifications subject to change without notice. 1/00
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